Aehr Test Systems Advances Semiconductor Testing with First Order for GaN Device Testing System

Aehr Test Systems, a renowned global supplier of semiconductor test and burn-in equipment, has recently marked a significant milestone by receiving its first order for the FOX-NP™ wafer level test and burn-in system, designed to cater to the testing needs of gallium nitride (GaN) power devices. Accompanied by the FOX WaferPak™ Aligner, this order from a leading global supplier of semiconductor devices signifies Aehr’s growing influence in the semiconductor industry, particularly in sectors like electric vehicles and power infrastructure.

The customer’s selection of Aehr for this critical task highlights the company's unique ability to test thousands of devices simultaneously under thermal and electrical stress while in wafer form. This capability is crucial for inducing and identifying early life failures in semiconductors, which, if not detected, could fail in real-world applications. Aehr's approach ensures these potential failures are addressed without compromising the longevity or performance of the remaining devices.

Gayn Erickson, President and CEO of Aehr Test Systems, commented on the customer's decision, noting the comprehensive evaluation that preceded it. "After seeing the positive results from their long and extensive evaluation of our FOX wafer level test systems for their silicon carbide devices, this customer decided to first move forward with our FOX-NP system to test their gallium nitride devices’ long-term reliability failure rates, as well as qualify the production extrinsic failure screening process for their devices in applications where safety, reliability, and/or security are critical,” Erickson said. He further emphasized the compatibility of the FOX-NP system with the Aehr FOX-XP system, which is geared towards high volume production. This compatibility is essential for consistent testing across different stages of device development and production.

Erickson also shed light on the inherent advantages of GaN semiconductors, particularly their efficiency in power conversion. “Similar to silicon carbide, gallium nitride semiconductor MOSFETs are considered wide bandgap devices with much higher efficiencies in terms of power conversion than silicon, with gallium nitride being particularly good for lower power devices such as under 1000 watt power converters used in consumer devices such as cell phones, tablets, and laptop computers, as well as being targeted for automotive power converters for all the electrical systems in automobiles, whether electric vehicles or traditional gasoline automobiles," he explained. Erickson further speculated on the potential of GaN MOSFETs to eventually replace silicon in photovoltaic applications, a shift supported by many industry analysts and technical communities.

The FOX-NP and FOX-XP systems' capability to conduct functional tests and burn-in/cycling of devices like silicon carbide and GaN power semiconductors, as well as other advanced integrated circuits, is a game changer in semiconductor testing. These systems can handle up to 18 wafers at a time, conducting electrical tests with precision and maintaining controlled temperatures through proprietary technology. This process is crucial for ensuring the reliability of semiconductors used in demanding applications such as automotive and industrial settings.

This order not only establishes Aehr's position in the field of GaN semiconductor testing but also underscores the growing importance of reliable and efficient semiconductor components in various sectors, including electric vehicles and consumer electronics. Aehr's solutions align with the industry's push towards higher performance and reliability, signaling a promising future for the company in the realm of semiconductor testing and burn-in technology.