Infineon Unveils Innovative 4.5 kV XHP™ 3 IGBT Modules, Transforming Medium Voltage Drive and Transportation Sectors

Infineon Technologies AG has launched its groundbreaking 4.5 kV XHP™ 3 IGBT modules, signifying a notable shift in the landscape of medium voltage drives (MVD) and transportation technologies. This development is in response to the increasing global trend of suppliers taking on more complexity and the demand for more compact yet efficient IGBT modules in various industries.

These new modules are set to redefine the standards for applications operating in the 2000 to 3300 V AC range. Key industries that will benefit from this advancement include high-speed trains, commercial vehicles, large-scale industrial machinery, and more. The XHP™ 3 family includes a 450 A dual IGBT module featuring TRENCHSTOP™ IGBT4 and an emitter-controlled diode, and a 450 A double diode module equipped with an emitter-controlled E4 Diode. Both modules boast an improved isolation of 10.4 kV, facilitating easier paralleling and downsizing without compromising efficiency.

In contrast to the traditional complex busbars required for paralleling switching modules, the new design simplifies this process. It allows for a single straight busbar, streamlining the paralleling process and making it more efficient. This simplification is a significant step forward in terms of design and functionality.

Furthermore, the 4.5 kV XHP family enables developers to streamline their designs. Previously, conventional IGBT solutions relied on multiple single switches and a double diode, but now, designs can be more compact, using just two dual switches and a smaller double diode. This reduction in components is not just a leap in technology but also offers significant cost savings and reduces the overall footprint of the devices.

IGBT (Insulated Gate Bipolar Transistor) modules play a critical role in power electronics, used for switching electric power in various applications. They combine the high current capacity of a bipolar transistor with the easy control of a MOSFET, providing a highly efficient and fast switching solution. The introduction of the XHP™ 3 family with TRENCHSTOP™ technology and improved emitter-controlled diodes enhances performance by reducing power losses and improving thermal management, which is crucial for high-power applications.

The launch of Infineon's 4.5 kV XHP™ 3 IGBT modules marks a transformative step in the field of power electronics. By enabling significant downsizing while maintaining maximum efficiency, these modules are set to revolutionize the design and functionality of medium voltage drives and transportation applications. The new technology simplifies the manufacturing process and paves the way for cost-effective and space-efficient solutions across a range of industries.